by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English
|Series||NASA contractor report -- NASA CR-204107|
|Contributions||United States. National Aeronautics and Space Administration.|
|The Physical Object|
Free 2-day shipping. Buy Fabrication and Characterization of a Long Wavelength Inp Hbt-Based Optical Receiver at Skip to main content. Try Prime EN Hello, Sign in Account & Lists Sign in Account & Lists Orders Try Prime Cart. Fabrication and Characterization of a Long Wavelength InP HBT-Based Optical Receiver eBook: National Aeronautics and Space Administration NASA: : Kindle StoreAuthor: National Aeronautics and Space Administration NASA. The closed form design and analysis of a single HBT-based optical receiver front-end have been presented. The use of a single HBT to play the dual role of detector and amplifier will greatly simplify the fabrication of OEIC receiver in the monolithic by: 1.
Design and analysis of a single HBT-based optical receiver front-end. The model has been applied for characterization of an InP/InGaAs HBT used as a 3T photodetector in the mum wavelength. Request PDF | Low-cost InP–InGaAs PIN–HBT-based OEIC for up to 20 Gb/s optical communication systems | A detailed study of the performance analysis of a low-cost PIN/HBT optoelectronic. Then the signal is transmitted through an optical fiber that can be as long as a few hundred kilometers; finally it is converted back into electrical form (O/E) by an optical receiver. In long. P. Chakrabarti and Nitin Menon, “Sensitivity analysis of a single InP/In Ga As HBT based optical receiver front-end,” Presented and published in the Proc. Asia Pacific Microwave Conference (APMC ) held at New Delhi during Dec, , pp,
Optical Engineering (OE) publishes peer-reviewed papers reporting on research, development, and applications of optics, photonics, and imaging science and engineering. Optical waveguide fabrication by combination of spin-on-glass and plasma-enhanced chemical vapor deposition for optoelectronic integration Polarization-isolated. Hui, Rongqing, et al. “III-Nitride-Based Planar Lightwave Circuits for Long Wavelength Optical Communications.” IEEE Journal of Quantum Electronics, . Advanced Search >. Home > Proceedings > Volume > Proceedings > Volume Fabrication and Characterization of a Long Wavelength InP HBT-Based Optical Receiver (English Edition) eBook: National Aeronautics and Space Administration NASA: Format: Kindle.